r07ds0020ej0200 rev.2.00 page 1 of 6 mar 16, 2011 the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. preliminary data sheet np75p03ydg mos field effect transistor description the np75p03ydg is p-channel mos field effect transistor designed for high current switching applications. features ? low on-state resistance ? r ds(on) = 6.2 m max. (v gs = ? 10 v, i d = ? 37.5 a) ? low c iss : c iss = 3200 pf typ. (v ds = ? 25 v, v gs = 0 v) ? logic level drive type ? designed for automotive application and aec-q101 qualified ? small size package 8-pin hson ordering information part no. lead plating packing package np75p03ydg -e1-ay ? 1 8-pin hson, taping (e1 type) np75p03ydg -e2-ay ? 1 pure sn (tin) tape 2500 p/reel 8-pin hson, taping (e2 type) note: ? 1. pb-free (this product does not cont ain pb in the external electrode.) absolute maximum ratings (t a = 25 c) item symbol ratings unit drain to source voltage (v gs = 0 v) v dss ? 30 v gate to source voltage (v ds = 0 v) v gss m 20 v drain current (dc) (t c = 25 c) i d(dc) m 75 a drain current (pulse) ? 1 i d(pulse) m 225 a total power dissipation (t c = 25 c) p t1 138 w total power dissipation (t a = 25 c) ? 2 p t2 1.0 w channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c single avalanche current ? 3 i as 27 a single avalanche energy ? 3 e as 73 mj thermal resistance channel to case thermal resistance r th(ch-c) 1.09 c/w channel to ambient thermal resistance ? 2 r th(ch-a) 150 c/w notes: ? 1. t c = 25 c, pw 10 s, duty cycle 1% ? 2. mounted on glass epoxy subs trate of 40 mm x 40 mm x 0.8 mmt *3. starting t ch = 25 c, v dd = ? 15 v, r g = 25 , l = 100 h, v gs = ? 20 0 v r07ds0020ej0200 rev.2.00 mar 16, 2011
np75p03ydg chapter title r07ds0020ej0200 rev.2.00 page 2 of 6 mar 16, 2011 electrical characteristics (t a = 25 c) item symbol min typ max unit test conditions zero gate voltage drain current i dss ? 1 a v ds = ? 30 v, v gs = 0 v gate leakage current i gss m 100 na v gs = m 20 v, v ds = 0 v gate to source threshold voltage v gs(th) ? 1.0 ? 1.6 ? 2.5 v v ds = v gs , i d = ? 250 a forward transfer admittance ? 1 | y fs | 30 60 s v ds = ? 5 v, i d = ? 37.5 a r ds(on)1 4.8 6.2 m v gs = ? 10 v, i d = ? 37.5 a drain to source on-state resistance ? 1 r ds(on)2 6.2 9.6 m v gs = ? 5 v, i d = ? 37.5 a input capacitance c iss 3200 4800 pf v ds = ? 25 v, output capacitance c oss 660 990 pf v gs = 0 v, reverse transfer capacitance c rss 390 700 pf f = 1 mhz turn-on delay time t d(on) 13 26 ns v dd = ? 15 v, i d = ? 37.5 a, rise time t r 13 32 ns v gs = ? 10 v, turn-off delay time t d(off) 270 540 ns r g = 0 fall time t f 180 440 ns total gate charge q g 94 141 nc gate to source charge q gs 18 nc gate to drain charge q gd 29 nc v dd = ? 24 v, v gs = ? 10 v, i d = ? 75 a body diode forward voltage ? 1 v f(s-d) 1.0 1.5 v i f = ? 75 a, v gs = 0 v reverse recovery time t rr 62 ns reverse recovery charge q rr 65 nc i f = ? 75 a, v gs = 0 v, di/dt = 100 a/ s note: ? 1. pulsed test circuit 3 gate charge v gs = ? test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = ? ? ? ?
np75p03ydg chapter title r07ds0020ej0200 rev.2.00 page 3 of 6 mar 16, 2011 typical characteristics (t a = 25 c) derating factor of forward bias safe operating area total power dissipation vs. case temperature dt - percentage of rated power - % 0 20 40 60 80 100 0 25 50 75 100 125 150 175 t c - case temperature - c p t - total power dissipation - w 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175 t c - case temperature - c forward bias safe operating area i d - drain current - a -0.1 -1 -10 -100 -1000 -0.1 -1 -10 -100 i d(pulse) t c = 25 c single pulse power dissipation limited r d s ( o n ) l i m 1 i t e d ( v g s = ? 1 1 0 v ) p w = 1 1 0 0 s 1 ms 10 ms v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th(ch-a) : 150 c/w r th(ch-c) : 1.09 c/w single pulse mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt pw - pulse width - s 100 1 m 10 m 100 m 1 10 100 1000
np75p03ydg chapter title r07ds0020ej0200 rev.2.00 page 4 of 6 mar 16, 2011 drain current vs. drain to source voltage forward transf er characteristics i d - drain current - a -0 -50 -100 -150 -200 -250 -300 -0 -1 -2 -3 -4 v gs = ? 10 v pulsed ? 5 v v ds - drain to source voltage - v i d - drain current - a -0.001 -0.01 -0.1 -1 -10 -100 -1000 -1 -2 -3 -4 -5 v ds = ? 10 v pulsed 25 c 75 c 125 c t a = ? 55 c 150 c 175 c v gs - gate to source voltage - v gate to source threshold voltage vs. channel temperature forward transfer admittance vs. drain current v gs(th) - gate to source threshold voltage - v -2 -1.6 -1.2 -0.8 -0.4 0 -100 0 100 200 v ds = v gs i d = ? 250 a t ch - channel temperature - c | y fs | - forward transfer admittance - s 1 10 100 -0.1 -1 -10 -100 v ds = ? 5 v pulsed t a = ? 55 c 25 c 75 c 125 c 175 c i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 5 10 15 20 25 30 -0.1 -1 -10 -100 -1000 v gs = ? 5 v pulsed ? 10 v i d - drain current - a r ds(on) - drain to source on-state resistance - m 0 5 10 15 20 -0 -5 -10 -15 -20 i d = ? 75 a ? 37.5 a ? 15 a pulsed v gs - gate to source voltage - v
np75p03ydg chapter title r07ds0020ej0200 rev.2.00 page 5 of 6 mar 16, 2011 drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m 0 3 6 9 12 15 -100 0 100 200 v gs = ? 5 v i d = ? 37.5 a pulsed ? 10 v t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 10 100 1000 10000 -0.1 -1 -10 -100 c iss c oss c rss v gs = 0 v f = 1 mhz v ds - drain to source voltage - v switching characteristics dynamic input/output characteristics t d(on) , t r , t d(off) , t f - switching time - ns 1 10 100 1000 -0.1 -1 -10 -100 v dd = ? 15 v v gs = ? 10 v r g = 0 t d(off) t d(on) t r t f i d - drain current - a v ds - drain to source voltage - v -0 -5 -10 -15 -20 -25 -30 0 20 40 60 80 100 -0 -2 -4 -6 -8 -10 -12 v ds v gs i d = ? 75 a v dd = ? 24 v ? 15 v ? 6 v q g - gate charge - nc v gs - gate to source voltage - v source to drain diode forward voltage reverse recovery time vs. drain current i f - diode forward current - a -0.1 -1 -10 -100 -1000 00.511.5 pulsed v gs = ? 10 v 0 v v f(s-d) - source to drain voltage - v t rr - reverse recovery time - ns 1 10 100 1000 -0.1 -1 -10 -100 di/dt = ? 100 a/ s v gs = 0 v i f - drain current - a
np75p03ydg chapter title r07ds0020ej0200 rev.2.00 page 6 of 6 mar 16, 2011 package drawings (unit: mm) 8-pin hson (mass: 0.13 g typ.) 1 2 3 4 7 8 6 5 1.27 5.0 0.2 5.15 0.2 6.0 0.2 3.18 0.2 0.8 0.15 0.6 0.15 0.42 ? 0.05 +0.1 0.10 m 0.10 s 0 ? 0 +0.05 0.42 0.05 1.45 max. 3.8 0.2 1, 2, 3 : source 4 : gate 5, 6, 7, 8: drain 5.4 0.2 0.73 0.4 equivalent circuit source body diode gate drain remark strong electric field, when exposed to this devic e, can cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history np75p 03ydg data sheet description rev. date page summary 1.00 jul 01, 2010 ? first edition issued 2.00 mar 16, 2011 p.1 repetit ive avalanche current -> single avalanche current repetitive avalanche energy -> single avalanche energy modification of note *3
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